About this Course
Specialization
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Flexible deadlines

Flexible deadlines

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Advanced Level

Advanced Level

Hours to complete

Approx. 10 hours to complete

Suggested: 3 weeks of study, 2-5 hours per week....
Available languages

English

Subtitles: English...
Specialization
100% online

100% online

Start instantly and learn at your own schedule.
Flexible deadlines

Flexible deadlines

Reset deadlines in accordance to your schedule.
Advanced Level

Advanced Level

Hours to complete

Approx. 10 hours to complete

Suggested: 3 weeks of study, 2-5 hours per week....
Available languages

English

Subtitles: English...

Syllabus - What you will learn from this course

Week
1
Hours to complete
4 hours to complete

Metal-Oxide-Semiconductor (MOS) Device

In this module on MOS devices, we will cover the following topics:, MOS device structure, energy band diagram for MOS device at equilibrium, Flat band condition, Accumulation, Depletion, and Inversion of MOS under bias, Energy band diagram and charge distribution for MOS in inversion, Quantitative model and relevant parameters, Energy band diagram with channel bias, Inversion layer charge, and Effect on threshold voltage of MOS in non-equilibrium, C-V characteristics: Charge distribution under different biasing conditions, C-V characteristics: Frequency dependence, Effects of oxide charge on flat band and threshold voltages in non-ideal MOS, and Types of oxide charge in non-ideal MOS....
Reading
8 videos (Total 90 min), 2 readings, 1 quiz
Video8 videos
MOS at Equilibrium10m
Basic Operation of MOS13m
Analysis of MOS Operation9m
Analysis of MOS Operation (Part 2)10m
MOS in Non-Equilibrium15m
Capacitance-Voltage Characteristics13m
Non-Ideal MOS14m
Reading2 readings
Module Topics2m
Materials and Constants10m
Quiz1 practice exercise
Homework #1m
Week
2
Hours to complete
3 hours to complete

MOS Field Effect Transistor (MOSFET)

In this module on MOSFETs (metal-oxide semiconductor field effect transistors), we cover the following topics: History of development of MOSFETs, Device structure, Device types, Circuit symbols, Long channel theory, I-V characteristics, Modes of operation, Channel length modulation, Body bias effect, Bulk charge effect, Sub-threshold conduction, Source/drain charge sharing in short channel devices, Drain induced barrier lowering, Subsurface punchthrough, Mobility degradation, Velocity saturation, Drain current saturation, Scaling of drain current with channel length, and Scaling of speed with channel length....
Reading
7 videos (Total 65 min), 2 readings, 1 quiz
Video7 videos
Basic Operation of MOSFET12m
Advanced Operation of MOSFET 19m
Advanced Operation of MOSFET 28m
Short Channel Effects 18m
Short Channel Effects 212m
Short Channel MOSFET5m
Reading2 readings
Module Topics2m
Materials and Constants10m
Quiz1 practice exercise
Homework #2m
Week
3
Hours to complete
5 hours to complete

Bipolar Junction Transistor (BJT)

In this module on BJTs (bipolar junction transistors), we will cover the following topics: BJT Device structures, Energy band diagrams, Active bias, Leakage current, Recombination in base, Hoe injection, Non-uniform doping in base, Current gain, Switching with BJT, Single heterojunction bipolar transistor, Double heterojunction bipolar transistor, Non-uniform material, Early effect, Emitter bias dependence, High-level injection, Base, emitter and collector transit times, and RC time constant....
Reading
6 videos (Total 79 min), 2 readings, 2 quizzes
Video6 videos
Base-Emitter Current12m
Basic Operation of BJT9m
Heterojunction Bipolar Transistor (HBT)16m
Non-Ideal Behavior13m
Frequency Response10m
Reading2 readings
Module Topics2m
Materials and Constants10m
Quiz1 practice exercise
Homework #3m

Instructor

Avatar

Wounjhang Park

Professor
Electrical, Computer, and Energy Engineering

About University of Colorado Boulder

CU-Boulder is a dynamic community of scholars and learners on one of the most spectacular college campuses in the country. As one of 34 U.S. public institutions in the prestigious Association of American Universities (AAU), we have a proud tradition of academic excellence, with five Nobel laureates and more than 50 members of prestigious academic academies....

About the Semiconductor Devices Specialization

This Semiconductor Devices specialization is designed to be a deep dive into the fundamentals of the electronic devices that form the backbone of our current integrated circuits technology. You will gain valuable experience in semiconductor physics, pn junctions, metal-semiconductor contacts, bipolar junction transistors, metal-oxide-semiconductor (MOS) devices, and MOS field effect transistors. Specialization Learning Outcomes: *Learn fundamental mechanisms of electrical conduction in semiconductors *Understand operating principles of basic electronic devices including pn junction, metal-semiconductor contact, bipolar junction transistors and field effect transistors *Analyze and evaluate the performance of basic electronic devices *Prepare for further analysis of electronic and photonic devices based on semiconductors...
Semiconductor Devices

Frequently Asked Questions

  • Once you enroll for a Certificate, you’ll have access to all videos, quizzes, and programming assignments (if applicable). Peer review assignments can only be submitted and reviewed once your session has begun. If you choose to explore the course without purchasing, you may not be able to access certain assignments.

  • When you enroll in the course, you get access to all of the courses in the Specialization, and you earn a certificate when you complete the work. Your electronic Certificate will be added to your Accomplishments page - from there, you can print your Certificate or add it to your LinkedIn profile. If you only want to read and view the course content, you can audit the course for free.

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